Vishay Dual Plus Integrated Schottky 2 Type P-Channel MOSFET, 4.5 A, 30 V, 6-Pin PowerPAK SC-70-6L SIA817EDJ-T1-GE3

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RS 제품 번호:
180-7339
제조사 부품 번호:
SIA817EDJ-T1-GE3
제조업체:
Vishay
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브랜드

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

4.5A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK SC-70-6L

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.065Ω

Typical Gate Charge Qg @ Vgs

6.6nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

560mV

Maximum Gate Source Voltage Vgs

12V

Maximum Power Dissipation Pd

6.5W

Maximum Operating Temperature

150°C

Transistor Configuration

Dual Plus Integrated Schottky

Length

2.05mm

Width

2.05mm

Standards/Approvals

No

Height

750μm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay SIA817EDJ is a P-channel MOSFET with schottky diode having drain to source(Vds) voltage of -30V. It is having configuration of dual plus integrated schottky. The gate to source voltage(VGS) is 12V. It is having power PAK SC-70 package. It offers drain to source resistance (RDS.) 0.065ohms at 10VGS and 0.08ohms at 4.5VGS. Maximum drain current -4.5A.

Little foot plus Schottky power MOSFET

Thermally enhanced Power PAK SC-70 package small footprint area low on resistance thin 0.75 mm profile

Typical ESD protection (MOSFET): 1500 V (HBM)

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