Vishay Single EF 1 N-Channel Power MOSFET, 21 A, 600 V, 3-Pin TO-220AB SIHP21N60EF-GE3

모든 MOSFETs 열람하기
현재 비가용
죄송합니다. 언제 재입고될지 모릅니다.
RS 제품 번호:
180-7349
제조사 부품 번호:
SIHP21N60EF-GE3
제조업체:
Vishay
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Vishay

Product Type

Power MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220AB

Series

EF

Pin Count

3

Maximum Drain Source Resistance Rds

0.176Ω

Maximum Gate Source Voltage Vgs

30V

Maximum Power Dissipation Pd

227W

Typical Gate Charge Qg @ Vgs

84nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Transistor Configuration

Single

Height

6.71mm

Length

14.4mm

Standards/Approvals

No

Width

10.52mm

Number of Elements per Chip

1

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay SIHP21N60EF is a N-channel EF series power MOSFET with fast body diode having drain to source voltage(Vds) of 600V and gate to source voltage (VGS) 30V. It is having TO-220AB package. It is offers drain to source resistance (RDS.) of 0.176ohms at 10VGS. Maximum drain current 21A.

Fast body diode MOSFET using E series technology

Reduced trr, Qrr, and IRRM

Low figure-of-merit (FOM): Ron x Qg

관련된 링크들