onsemi Type N-Channel MOSFET, 88 A, 40 V Enhancement, 4-Pin TO-252 NVD5C454NLT4G
- RS 제품 번호:
- 178-4623
- 제조사 부품 번호:
- NVD5C454NLT4G
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩16,882.40
제한된 재고
- 추가로 2026년 1월 26일 부터 2,210 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 620 | ₩1,688.24 | ₩16,882.40 |
| 630 - 1240 | ₩1,646.88 | ₩16,468.80 |
| 1250 + | ₩1,620.56 | ₩16,205.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 178-4623
- 제조사 부품 번호:
- NVD5C454NLT4G
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 88A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 3.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 56W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.25mm | |
| Width | 6.22 mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 88A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 3.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 56W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 2.25mm | ||
Width 6.22 mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- VN
Automotive Power MOSFET in a DPAK package designed for compact and efficient designs and including high thermal performance.Suitable for automotive applications.
Features
Low on-resistance
High current capability
PPAP capable
Benefits
Minimal conduction losses
Robust load performance
Voltage overstress safeguard
Applications
Low Side Driver
High Side Driver
Motor drive
End Products
Automotive powertrain
Automotive HVAC motors
ABS pressure pumps
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