제조사부품번호

onsemi FDMC Type N-Channel MOSFET, 22 A, 80 V Enhancement, 8-Pin PQFN FDMC007N08LCDC

RS 제품 번호:: 178-4558
제조사 부품 번호:: FDMC007N08LCDC
제조업체:: onsemi

onsemi FDMC Type N-Channel MOSFET, 22 A, 80 V Enhancement, 8-Pin PQFN FDMC007N08LCDC

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대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩25,229.60

마지막 RS 재고

최종적인 2,960 개 unit(s)이 배송 준비 됨

수량	한팩당	한팩당*
10 - 740	₩2,522.96	₩25,229.60
750 - 1490	₩2,477.84	₩24,778.40
1500 +	₩2,434.60	₩24,346.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 178-4558
제조사 부품 번호:: FDMC007N08LCDC
제조업체:: onsemi

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	22A
	Maximum Drain Source Voltage Vds	80V
	Series	FDMC
	Package Type	PQFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	6.8mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	57W
	Typical Gate Charge Qg @ Vgs	31nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Length	3.4mm
	Width	3.4 mm
	Height	0.75mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 22A
	Maximum Drain Source Voltage Vds 80V
	Series FDMC
	Package Type PQFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 6.8mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 57W
	Typical Gate Charge Qg @ Vgs 31nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Length 3.4mm
	Width 3.4 mm
	Height 0.75mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: PH

This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on on-state resistance and yet maintain in class soft body diode

Shielded Gate MOSFET Technology

Max rDS(on) = 6.8 mΩ at VGS = 10 V, ID = 21 A

Max rDS(on) = 11.1 mΩ at VGS = 4.5 V, ID = 17 A

5 V Drive Capable

50% lower Qrr than other MOSFET suppliers

Lowers switching noise/EMI

MSL1 robust package design

Dualcool capable package

Applications

Primary DC−DC MOSFET

Synchronous Rectifier in DC−DC and AC−DC

Motor Drive

Solar

onsemi FDMC Type N-Channel MOSFET, 22 A, 80 V Enhancement, 8-Pin PQFN FDMC007N08LCDC

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