onsemi FDMC Type N-Channel MOSFET, 22 A, 80 V Enhancement, 8-Pin PQFN
- RS 제품 번호:
- 178-4249
- 제조사 부품 번호:
- FDMC007N08LCDC
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 3000 units)*
₩8,312,850.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 3000 | ₩2,770.95 | ₩8,312,850.00 |
| 6000 - 9000 | ₩2,716.35 | ₩8,146,710.00 |
| 12000 + | ₩2,661.75 | ₩7,983,495.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 178-4249
- 제조사 부품 번호:
- FDMC007N08LCDC
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PQFN | |
| Series | FDMC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.8mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 57W | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.75mm | |
| Length | 3.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PQFN | ||
Series FDMC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.8mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 57W | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.75mm | ||
Length 3.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on on-state resistance and yet maintain in class soft body diode
Shielded Gate MOSFET Technology
Max rDS(on) = 6.8 mΩ at VGS = 10 V, ID = 21 A
Max rDS(on) = 11.1 mΩ at VGS = 4.5 V, ID = 17 A
5 V Drive Capable
50% lower Qrr than other MOSFET suppliers
Lowers switching noise/EMI
MSL1 robust package design
Dualcool capable package
Applications
Primary DC−DC MOSFET
Synchronous Rectifier in DC−DC and AC−DC
Motor Drive
Solar
관련된 링크들
- onsemi FDMC Type N-Channel MOSFET, 22 A, 80 V Enhancement, 8-Pin PQFN FDMC007N08LCDC
- onsemi PowerTrench Type N-Channel MOSFET, 57 A, 100 V Enhancement, 8-Pin PQFN FDMC86184
- onsemi PowerTrench Type N-Channel MOSFET, 57 A, 100 V Enhancement, 8-Pin PQFN
- onsemi NTTF Type N-Channel MOSFET, 84 A, 80 V Enhancement, 8-Pin PQFN
- onsemi FDMS Type N-Channel MOSFET, 116 A, 80 V Enhancement, 8-Pin PQFN
- onsemi NTMFS006N08MC Type N-Channel MOSFET, 32 A, 80 V Enhancement, 8-Pin PQFN
- onsemi PowerTrench Type N-Channel MOSFET, 80 A, 40 V Enhancement, 8-Pin WDFN FDMC8360L
- onsemi NTMFS006N08MC Type N-Channel MOSFET, 32 A, 80 V Enhancement, 8-Pin PQFN NTMFS006N08MC