제조사부품번호

onsemi FDMS Type N-Channel MOSFET, 67 A, 120 V Enhancement, 8-Pin PQFN FDMS4D0N12C

RS 제품 번호:: 178-4409
제조사 부품 번호:: FDMS4D0N12C
제조업체:: onsemi

onsemi FDMS Type N-Channel MOSFET, 67 A, 120 V Enhancement, 8-Pin PQFN FDMS4D0N12C

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대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩48,748.40

마지막 RS 재고

최종적인 2,950 개 unit(s)이 배송 준비 됨

수량	한팩당	한팩당*
10 - 740	₩4,874.84	₩48,748.40
750 - 1490	₩4,752.64	₩47,526.40
1500 +	₩4,681.20	₩46,812.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 178-4409
제조사 부품 번호:: FDMS4D0N12C
제조업체:: onsemi

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	67A
	Maximum Drain Source Voltage Vds	120V
	Series	FDMS
	Package Type	PQFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	4mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	36nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	106W
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	6 mm
	Height	1.05mm
	Length	5mm
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 67A
	Maximum Drain Source Voltage Vds 120V
	Series FDMS
	Package Type PQFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 4mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 36nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 106W
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 6 mm
	Height 1.05mm
	Length 5mm
	Automotive Standard No

COO (Country of Origin):: PH

This N-Channel MV MOSFET is produced using advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Shielded Gate MOSFET Technology

Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 67 A

Max rDS(on) = 8.0 mΩ at VGS = 6 V, ID = 33 A

50% Lower Qrr than Other MOSFET Suppliers

Lowers Switching Noise/EMI

MSL1 Robust Package Design

Applications:

This product is general usage and suitable for many different applications.

End Products:

AC-DC and DC-DC Power Supplies

onsemi FDMS Type N-Channel MOSFET, 67 A, 120 V Enhancement, 8-Pin PQFN FDMS4D0N12C

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