제조사부품번호

onsemi FDMS86181 Type N-Channel MOSFET, 124 A, 100 V Enhancement, 8-Pin PQFN FDMS86181

RS 제품 번호:: 181-1895
제조사 부품 번호:: FDMS86181
제조업체:: onsemi

onsemi FDMS86181 Type N-Channel MOSFET, 124 A, 100 V Enhancement, 8-Pin PQFN FDMS86181

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩20,774.00

마지막 RS 재고

최종적인 2,990 개 unit(s)이 배송 준비 됨

수량	한팩당	한팩당*
5 - 745	₩4,154.80	₩20,774.00
750 - 1495	₩4,049.52	₩20,247.60
1500 +	₩3,985.60	₩19,928.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 181-1895
제조사 부품 번호:: FDMS86181
제조업체:: onsemi

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	124A
	Maximum Drain Source Voltage Vds	100V
	Series	FDMS86181
	Package Type	PQFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	12mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	125W
	Typical Gate Charge Qg @ Vgs	42nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Length	5.85mm
	Standards/Approvals	No
	Height	1.05mm
	Width	5 mm
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 124A
	Maximum Drain Source Voltage Vds 100V
	Series FDMS86181
	Package Type PQFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 12mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 125W
	Typical Gate Charge Qg @ Vgs 42nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Length 5.85mm
	Standards/Approvals No
	Height 1.05mm
	Width 5 mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: PH

This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Shielded Gate MOSFET Technology

Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A

Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A

50% lower Qrr than other MOSFET suppliers

Lowers switching noise/EMI

This product is general usage and suitable for many different applications.

onsemi FDMS86181 Type N-Channel MOSFET, 124 A, 100 V Enhancement, 8-Pin PQFN FDMS86181

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