제조사부품번호

Vishay Siliconix TrenchFET Type P-Channel MOSFET, 100 A, 30 V Enhancement, 4-Pin TO-252 SQD40031EL_GE3

RS 제품 번호:: 178-3950
제조사 부품 번호:: SQD40031EL_GE3
제조업체:: Vishay Siliconix

Vishay Siliconix TrenchFET Type P-Channel MOSFET, 100 A, 30 V Enhancement, 4-Pin TO-252 SQD40031EL_GE3

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대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩20,567.20

재고있음

추가로 2025년 12월 29일 부터 660 개 단위 배송

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수량	한팩당	한팩당*
10 - 490	₩2,056.72	₩20,567.20
500 - 990	₩2,004.08	₩20,040.80
1000 +	₩1,975.88	₩19,758.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 178-3950
제조사 부품 번호:: SQD40031EL_GE3
제조업체:: Vishay Siliconix

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay Siliconix
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	30V
	Series	TrenchFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	5mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.5V
	Maximum Power Dissipation Pd	136W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	186nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	2.38 mm
	Height	6.22mm
	Length	6.73mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Vishay Siliconix
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 30V
	Series TrenchFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 5mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.5V
	Maximum Power Dissipation Pd 136W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 186nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 2.38 mm
	Height 6.22mm
	Length 6.73mm
	Automotive Standard AEC-Q101

Datasheet

COO (Country of Origin):: TW

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 3.2mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 136W and continuous drain current of 100A. It has a minimum and a maximum driving voltage of 4.5V and 10V. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

Certifications

• AEC-Q101

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested

Vishay Siliconix TrenchFET Type P-Channel MOSFET, 100 A, 30 V Enhancement, 4-Pin TO-252 SQD40031EL_GE3

Vishay MOSFET

Features and Benefits

Certifications

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