Vishay TrenchFET Type P-Channel MOSFET, 100 A, 30 V Enhancement, 4-Pin TO-252 SQD40031EL_GE3

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RS 제품 번호:
178-3715
제조사 부품 번호:
SQD40031EL_GE3
제조업체:
Vishay
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브랜드

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

TO-252

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.5V

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

186nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

136W

Maximum Operating Temperature

175°C

Width

2.38mm

Standards/Approvals

No

Length

6.73mm

Height

6.22mm

Automotive Standard

AEC-Q101

제외

Vishay MOSFET


The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 3.2mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 136W and continuous drain current of 100A. It has a minimum and a maximum driving voltage of 4.5V and 10V. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

Certifications


• AEC-Q101

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested

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