Vishay Siliconix SQJ872EP Type N-Channel MOSFET, 24.5 A, 150 V Enhancement, 8-Pin SO-8L SQJ872EP-T1_GE3

RS 제품 번호:: 178-3903
제조사 부품 번호:: SQJ872EP-T1_GE3
제조업체:: Vishay Siliconix

Vishay Siliconix SQJ872EP Type N-Channel MOSFET, 24.5 A, 150 V Enhancement, 8-Pin SO-8L SQJ872EP-T1_GE3

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Subtotal (1 pack of 10 units)*

₩21,380.00

공급 부족

추가로 2026년 8월 24일 부터 2,920 개 단위 배송

당사의 현재 재고는 제한중이며, 제조사측에서는 공급 부족을 예상하고 있습니다.

수량	한팩당	한팩당*
10 - 740	₩2,138.00	₩21,380.00
750 - 1490	₩2,082.00	₩20,820.00
1500 +	₩2,052.00	₩20,520.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 178-3903
제조사 부품 번호:: SQJ872EP-T1_GE3
제조업체:: Vishay Siliconix

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모두 선택	제품 정보	값
	브랜드	Vishay Siliconix
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	24.5A
	Maximum Drain Source Voltage Vds	150V
	Package Type	SO-8L
	Series	SQJ872EP
	Mount Type	PCB
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0395Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	55W
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	14nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Height	1.07mm
	Length	5.99mm
	Width	5mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Vishay Siliconix
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 24.5A
	Maximum Drain Source Voltage Vds 150V
	Package Type SO-8L
	Series SQJ872EP
	Mount Type PCB
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0395Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 55W
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 14nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Height 1.07mm
	Length 5.99mm
	Width 5mm
	Automotive Standard AEC-Q101

Datasheet

COO (Country of Origin):: CN

Vishay SQJ872EP Series MOSFET, 150V Drain Source Voltage, 24.5A Continuous Drain Current - SQJ872EP-T1_GE3

This MOSFET is a power switching device designed for high-voltage, high-current applications in demanding environments. It functions as an N‑channel enhancement transistor for switching and power conversion roles. The device is suitable for PCB mounting in a small-outline package and is manufactured to meet industry environmental standards.

Features and Benefits:

• Low on-resistance 0.0395Ω delivering reduced conduction losses
• High voltage capability 150V enabling robust switching headroom
• Continuous current rating 24.5A supporting substantial load currents
• Gate charge 14nC enabling efficient switching control
• Power dissipation 55W allowing sustained thermal load handling
• Wide gate tolerance ±20V making gate drive design flexible

Applications

• Suitable for automotive power stages requiring AEC‑Q101 compliance
• Ideal for industrial motor drive switch arrays
• Used with DC-DC converters in high-voltage systems
• Can be used for synchronous rectification in power supplies
• Useful in inverter and UPS front-end switching stages

What temperature range can it tolerate in harsh installations?

It operates across an extended span from -55°C up to 175°C, supporting extreme industrial and automotive thermal conditions.

What package and mounting approach does it use for board assembly?

The device is supplied in an SO‑8L package designed for PCB mounting to simplify integration into compact assemblies.

How does its forward voltage impact system design?

The forward conduction drop is 1.2V under specified conditions, which should be included in power-loss calculations and thermal‑management assessments.

Is the device suitable for regulated manufacturing and environmental requirements?

It meets RoHS directives, indicating restriction of specified hazardous substances in the component materials.