Vishay IRF840S Type N-Channel Power MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-263 IRF840SPBF

RS 제품 번호:: 178-0872
제조사 부품 번호:: IRF840SPBF
제조업체:: Vishay

Vishay IRF840S Type N-Channel Power MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-263 IRF840SPBF

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Subtotal (1 tube of 50 units)*

₩102,300.00

50 개 단위 배송 준비 완료

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수량	한팩당	Per Tube*
50 - 200	₩2,046.00	₩102,320.00
250 +	₩1,986.00	₩99,260.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 178-0872
제조사 부품 번호:: IRF840SPBF
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	500V
	Series	IRF840S
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	850mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	2V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	63nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	125W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Width	9.65mm
	Height	4.83mm
	Length	10.41mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 500V
	Series IRF840S
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 850mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 2V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 63nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 125W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Width 9.65mm
	Height 4.83mm
	Length 10.41mm
	Automotive Standard No

Trans MOSFET N-CH 500V 8A

COO (Country of Origin):: CN

Vishay IRF840S Series Power MOSFET, 500V Drain Source Voltage, 125W Maximum Power Dissipation - IRF840SPBF

This power MOSFET is a high-voltage N-channel switching device designed for surface-mount applications in power conversion and control systems. It operates across a wide thermal range and is intended for use where robust voltage handling and moderate current capability are required, such as industrial power supplies and high-voltage switching stages.

Features and Benefits:

• 500V drain-source rating enables high-voltage switching
• 8A continuous drain current supports sustained load currents
• 125W power dissipation allows high-power handling
• 850mΩ Rds(on) reduces conduction losses at operational currents
• 63nC typical gate charge permits predictable switching performance
• 20V gate-source limit provides wide gate-drive margin

Applications

• Suitable for high-voltage power-supply switching stages
• Ideal for motor-drive inverter front-ends
• Used with boost-converter topologies in industrial units
• Can be used for switch-mode power-rectification modules
• Suitable for high-voltage load switching in test equipment

What mounting method is required for reliable assembly?

It is supplied in a TO-263 package configured for surface-mount PCB attachment, enabling reflow soldering and thermal connection to a PCB copper area.

How does the device perform across temperature extremes?

The junction is rated to operate from -55°C up to 150°C, allowing use in environments with wide ambient and thermal swings.

What gate-drive limitations must be observed?

Gate-source voltage must not exceed 20V to prevent device damage, so gate-drive circuitry should include appropriate clamping or level control.

Are there automotive qualifications for this part?

It is not specified as meeting automotive standards, so it should not be assumed automotive-grade for vehicle-safety applications.