제조사부품번호

Microchip TN2540 N-Channel MOSFET, 260 mA, 400 V Enhancement, 3-Pin TO-243

RS 제품 번호:: 177-9854P
제조사 부품 번호:: TN2540N8-G
제조업체:: Microchip

Microchip TN2540 N-Channel MOSFET, 260 mA, 400 V Enhancement, 3-Pin TO-243

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대량 구매 할인 받기

1000개 더 담고 ₩42,000.00 할인 받기

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Subtotal 500 units (supplied on a reel)*

₩1,407,000.00

현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.

수량	한팩당	절감
500 - 990	₩2,814.00	-
1000 +	₩2,772.00	₩42,000.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 177-9854P
제조사 부품 번호:: TN2540N8-G
제조업체:: Microchip

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모두 선택	제품 정보	값
	브랜드	Microchip
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	260mA
	Maximum Drain Source Voltage Vds	400V
	Package Type	TO-243
	Series	TN2540
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	12Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.8V
	Maximum Power Dissipation Pd	1.6W
	Maximum Operating Temperature	150°C
	Length	4.6mm
	Standards/Approvals	No
	Width	2.6mm
	Height	1.6mm
	Automotive Standard	No

	모두 선택
	브랜드 Microchip
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 260mA
	Maximum Drain Source Voltage Vds 400V
	Package Type TO-243
	Series TN2540
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 12Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.8V
	Maximum Power Dissipation Pd 1.6W
	Maximum Operating Temperature 150°C
	Length 4.6mm
	Standards/Approvals No
	Width 2.6mm
	Height 1.6mm
	Automotive Standard No

Datasheet

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Low threshold (2.0V max.)

High input impedance

Low input capacitance (125pF max.)

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

Microchip TN2540 N-Channel MOSFET, 260 mA, 400 V Enhancement, 3-Pin TO-243

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