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Microchip Single TN0110 1 N-Channel MOSFET, 350 mA, 100 V Enhancement, 3-Pin TO-92 TN0110N3-G

RS 제품 번호:: 177-9742P
제조사 부품 번호:: TN0110N3-G
제조업체:: Microchip

Microchip Single TN0110 1 N-Channel MOSFET, 350 mA, 100 V Enhancement, 3-Pin TO-92 TN0110N3-G

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RS 제품 번호:: 177-9742P
제조사 부품 번호:: TN0110N3-G
제조업체:: Microchip

참조 문서

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모두 선택	제품 정보	값
	브랜드	Microchip
	Transistor Configuration	Single
	Series	TN0110
	Number of Elements per Chip	1
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current (Id)	350 mA
	Maximum Drain Source Voltage (Vds)	100 V
	Channel Mode	Enhancement
	Pin Count	3
	Package Type	TO-92
	Forward Voltage (Vf)	1.5 V
	Height	5.33 mm
	Length	5.08 mm
	Maximum Drain Source Resistance (Rds)	4.5 Ω
	Maximum Gate Source Voltage (Vgs)	20 V
	Maximum Operating Temperature	150 °C
	Maximum Power Dissipation (Pd)	1 W
	Minimum Operating Temperature	-55 °C
	Mount Type	Through Hole
	Width	4.06 mm

	모두 선택
	브랜드 Microchip
	Transistor Configuration Single
	Series TN0110
	Number of Elements per Chip 1
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current (Id) 350 mA
	Maximum Drain Source Voltage (Vds) 100 V
	Channel Mode Enhancement
	Pin Count 3
	Package Type TO-92
	Forward Voltage (Vf) 1.5 V
	Height 5.33 mm
	Length 5.08 mm
	Maximum Drain Source Resistance (Rds) 4.5 Ω
	Maximum Gate Source Voltage (Vgs) 20 V
	Maximum Operating Temperature 150 °C
	Maximum Power Dissipation (Pd) 1 W
	Minimum Operating Temperature -55 °C
	Mount Type Through Hole
	Width 4.06 mm

Datasheet

COO (Country of Origin):: TW

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Low threshold - 2.0V max.

High input impedance

Low input capacitance - 50pF typical

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

Microchip Single TN0110 1 N-Channel MOSFET, 350 mA, 100 V Enhancement, 3-Pin TO-92 TN0110N3-G

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