Vishay IRFR320 Type N-Channel Power MOSFET, 3.1 A, 400 V Enhancement, 3-Pin TO-252

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₩2,238,600.00

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  • 2026년 11월 02일 부터 배송
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2000 - 8000₩1,119.30₩2,240,160.00
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RS 제품 번호:
177-7558
제조사 부품 번호:
IRFR320TRPBF
제조업체:
Vishay
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

3.1A

Maximum Drain Source Voltage Vds

400V

Series

IRFR320

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.8Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

20nC

Forward Voltage Vf

1.6V

Maximum Power Dissipation Pd

42W

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Width

6.22mm

Height

2.38mm

Standards/Approvals

RoHS

Length

6.73mm

Automotive Standard

No

Vishay IRFR320 Series Power MOSFET, 400V Drain-Source Voltage, 3.1A Continuous Drain Current - IRFR320TRPBF


This power MOSFET is a high-voltage N-channel device designed for switching and amplification tasks in industrial electronics. It operates as an enhancement-mode transistor suited to surface-mount assemblies and supports demanding electrical environments where controlled high-voltage switching is required.

Features and Benefits:


• 400V drain rating enables high-voltage switching applications • 3.1A continuous drain capacity supports moderate current loads • 1.8Ω low Rds(on) minimises conduction losses at rated conditions • 20nC typical gate charge allows predictable switching dynamics • 42W maximum power dissipation permits significant thermal loading • -55°C to 150°C operating range ensures wide temperature resilience

Applications


• Suitable for flyback and forward converters in power supplies • Ideal for industrial motor control stages with high-voltage rails • Used for high-voltage lighting and ballast switching circuits • Can be used for protection circuits requiring robust blocking voltage

What package type should I expect for surface mounting?


The device is supplied in a TO-252 package configured for solder-down mounting to a PCB and thermal plane.

What gate voltage limits must I observe during design?


Gate excursions must remain within ±20V relative to the source to avoid exceeding the gate-source rating.

How should thermal management be approached on a board?


Use adequate copper area and thermal vias under the TO-252 land to dissipate up to the stated 42W power, considering derating for ambient temperature and airflow.

What atmosphere and approval considerations apply for procurement?


The component conforms to RoHS material restrictions for lead‑free system integration.

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