Vishay P-Channel MOSFET, 2.7 A, 250 V, 3-Pin DPAK IRFR9214TRPBF
- RS 제품 번호:
- 177-7562
- 제조사 부품 번호:
- IRFR9214TRPBF
- 제조업체:
- Vishay
대량 구매 할인 기용 가능
Subtotal (1 reel of 2000 units)*
₩1,974,000.00
현재 액세스할 수 없는 재고 정보
수량 | 한팩당 | 릴당* |
|---|---|---|
| 2000 - 2000 | ₩987.00 | ₩1,972,496.00 |
| 4000 - 6000 | ₩956.92 | ₩1,913,464.00 |
| 8000 + | ₩928.72 | ₩1,855,936.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 177-7562
- 제조사 부품 번호:
- IRFR9214TRPBF
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 2.7 A | |
| Maximum Drain Source Voltage | 250 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 50 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 14 nC @ 10 V | |
| Length | 6.73mm | |
| Number of Elements per Chip | 1 | |
| Width | 6.22mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.38mm | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 2.7 A | ||
Maximum Drain Source Voltage 250 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 50 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 14 nC @ 10 V | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Width 6.22mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 2.38mm | ||
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
The Vishay third generation power MOSFETs utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced process technology
Fast switching
Fully avalanche rated
Fast switching
Fully avalanche rated
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
MOSFET Transistors, Vishay Semiconductor
관련된 링크들
- Vishay P-Channel MOSFET, 2.7 A, 250 V, 3-Pin DPAK IRFR9214TRPBF
- Vishay N-Channel MOSFET, 14 A, 60 V DPAK IRFR020TRPBF
- Vishay P-Channel MOSFET, 5.3 A, 50 V DPAK IRFR9010TRPBF
- Vishay MOSFET IRFR9214PBF
- Vishay N-Channel MOSFET, 1.7 A, 400 V, 3-Pin DPAK IRFR310TRPBF
- Vishay N-Channel MOSFET, 2.4 A, 500 V, 3-Pin DPAK IRFR420TRPBF
- Vishay N-Channel MOSFET, 7.7 A, 60 V, 3-Pin DPAK IRFR014TRPBF
- Vishay P-Channel MOSFET, 9.9 A, 50 V, 3-Pin DPAK IRFR9020TRPBF
