제조사부품번호

onsemi NTH N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-247 NTHL082N65S3F

RS 제품 번호:: 172-8980P
제조사 부품 번호:: NTHL082N65S3F
제조업체:: onsemi

onsemi NTH N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-247 NTHL082N65S3F

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

현재 비가용

RS는 이 제품을 더 이상 판매하지 않습니다.

RS 제품 번호:: 172-8980P
제조사 부품 번호:: NTHL082N65S3F
제조업체:: onsemi

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247
	Series	NTH
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	82mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	81nC
	Maximum Power Dissipation Pd	313W
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Width	4.82mm
	Standards/Approvals	No
	Length	15.87mm
	Height	20.82mm
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247
	Series NTH
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 82mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 81nC
	Maximum Power Dissipation Pd 313W
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Width 4.82mm
	Standards/Approvals No
	Length 15.87mm
	Height 20.82mm
	Automotive Standard No

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SuperFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150 °C

Higher system reliability at low temperature operation

Ultra Low Gate Charge (Typ. Qg = 81 nC)

Lower switching loss

Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)

Lower switching loss

Excellent body diode performance (low Qrr, robust body diode)

Higher system reliability in LLC and Phase shift full bridge circuit

Optimized Capacitance

Lower peak Vds and lower Vgs oscillation

Typ. RDS(on) = 70 mΩ

Applications

Telecommunication

Cloud system

Industrial

Telecom power

Server power

EV charger

Solar / UPS

onsemi NTH N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-247 NTHL082N65S3F

관련된 링크들