제조사부품번호

ROHM N-Channel MOSFET, 4 A, 600 V, 3-Pin TO-220FM R6004ENX

RS 제품 번호:: 172-0546
제조사 부품 번호:: R6004ENX
제조업체:: ROHM

ROHM N-Channel MOSFET, 4 A, 600 V, 3-Pin TO-220FM R6004ENX

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RS는 더 이상 이 제품을 입고하지 않습니다.

RS 제품 번호:: 172-0546
제조사 부품 번호:: R6004ENX
제조업체:: ROHM

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	ROHM
	Channel Type	N
	Maximum Continuous Drain Current	4 A
	Maximum Drain Source Voltage	600 V
	Package Type	TO-220FM
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	1.36 Ω
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	40 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	±20 V
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	1
	Width	4.8mm
	Length	10.3mm
	Typical Gate Charge @ Vgs	15 nC @ 10 V
	Forward Diode Voltage	1.5V
	Height	15.4mm

	모두 선택
	브랜드 ROHM
	Channel Type N
	Maximum Continuous Drain Current 4 A
	Maximum Drain Source Voltage 600 V
	Package Type TO-220FM
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 1.36 Ω
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 40 W
	Transistor Configuration Single
	Maximum Gate Source Voltage ±20 V
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 1
	Width 4.8mm
	Length 10.3mm
	Typical Gate Charge @ Vgs 15 nC @ 10 V
	Forward Diode Voltage 1.5V
	Height 15.4mm

COO (Country of Origin):: JP

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Low on-resistance.
Fast switching speed.
Gate-source voltage (VGSS) guaranteed to be ±20V.
Drive circuits can be simple.
Parallel use is easy.
Pb-free lead plating

ROHM N-Channel MOSFET, 4 A, 600 V, 3-Pin TO-220FM R6004ENX

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