제조사부품번호

Toshiba Type P-Channel MOSFET, 8 A, 60 V Enhancement, 3-Pin TO-252

RS 제품 번호:: 171-2415
제조사 부품 번호:: TJ8S06M3L
제조업체:: Toshiba

Toshiba Type P-Channel MOSFET, 8 A, 60 V Enhancement, 3-Pin TO-252

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RS 제품 번호:: 171-2415
제조사 부품 번호:: TJ8S06M3L
제조업체:: Toshiba

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Toshiba
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	130mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	27W
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	19nC
	Maximum Gate Source Voltage Vgs	10 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	2.3mm
	Width	7 mm
	Standards/Approvals	No
	Length	6.5mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Toshiba
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 130mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 27W
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 19nC
	Maximum Gate Source Voltage Vgs 10 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 2.3mm
	Width 7 mm
	Standards/Approvals No
	Length 6.5mm
	Automotive Standard AEC-Q101

해당 안됨

COO (Country of Origin):: JP

Applications

Automotive

Motor Drivers

DC-DC Converters

Switching Voltage Regulators

Features

Low drain-source on-resistance: RDS(ON) = 80 mΩ (typ.) (VGS = -10 V)

Low leakage current: IDSS = -10 μA (max) (VDS = -60V)

Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)

Toshiba Type P-Channel MOSFET, 8 A, 60 V Enhancement, 3-Pin TO-252

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