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Toshiba N-Channel MOSFET, 340 A, 40 V Enhancement, 8-Pin SOP TPHR8504PL

Name: Toshiba N-Channel MOSFET, 340 A, 40 V Enhancement, 8-Pin SOP TPHR8504PL
Brand: Toshiba
SKU: 171-2383
Availability: InStock

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Subtotal (1 pack of 5 units)*

₩18,680.00

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* 참고 가격: 실제 구매가격과 다를 수 있습니다

사양

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Toshiba
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	340A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SOP
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.4mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.2V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	170W
	Typical Gate Charge Qg @ Vgs	103nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	175°C
	Width	5mm
	Standards/Approvals	No
	Length	5mm
	Height	0.95mm
	Automotive Standard	No

	모두 선택
	브랜드 Toshiba
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 340A
	Maximum Drain Source Voltage Vds 40V
	Package Type SOP
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.4mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.2V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 170W
	Typical Gate Charge Qg @ Vgs 103nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 175°C
	Width 5mm
	Standards/Approvals No
	Length 5mm
	Height 0.95mm
	Automotive Standard No

해당 안됨

High-Efficiency DC-DC Converters

Switching Voltage Regulators

Motor Drivers

High-speed switching

Small gate charge: QSW = 23 nC (typ.)

Small output charge: Qoss = 85.4 nC (typ.)

Low drain-source on-resistance: RDS(ON) = 0.7 mΩ (typ.) (VGS = 10 V)

Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)

Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 1.0 mA)

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