Infineon BSC070N10NS5 Type N-Channel MOSFET, 80 A, 80 V Enhancement, 8-Pin TDSON BSC070N10NS5ATMA1

RS 제품 번호:: 171-1963
제조사 부품 번호:: BSC070N10NS5ATMA1
제조업체:: Infineon

Infineon BSC070N10NS5 Type N-Channel MOSFET, 80 A, 80 V Enhancement, 8-Pin TDSON BSC070N10NS5ATMA1

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 pack of 10 units)*

₩22,500.00

일시적 품절

4,180 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
10 - 1240	₩2,250.00	₩22,500.00
1250 - 2490	₩2,194.00	₩21,940.00
2500 +	₩2,160.00	₩21,600.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 171-1963
제조사 부품 번호:: BSC070N10NS5ATMA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	80A
	Maximum Drain Source Voltage Vds	80V
	Series	BSC070N10NS5
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	10.2mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	30nC
	Maximum Power Dissipation Pd	83W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	1.1mm
	Length	5.49mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 80A
	Maximum Drain Source Voltage Vds 80V
	Series BSC070N10NS5
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 10.2mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 30nC
	Maximum Power Dissipation Pd 83W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 1.1mm
	Length 5.49mm
	Automotive Standard No

Infineon BSC070N10NS5 Series MOSFET, 80A Maximum Continuous Drain Current, 80V Maximum Drain Source Voltage - BSC070N10NS5ATMA1

This MOSFET is a high-current, N-channel enhancement device designed for surface-mount power stages. It is intended for switching and power-conversion contexts where compact mounting and robust conduction are required. The component operates across a wide temperature range and is built for applications demanding substantial current-handling and gate-drive tolerance.

Features and Benefits:

• Very low Rds(on) 10.2 mΩ for reduced conduction losses
• High continuous drain current 80A enabling heavy load operation
• Maximum Vds 80V for mid-voltage power systems
• Typical gate charge 30 nC for efficient switching control
• Peak power dissipation 83W to handle thermal stress
• Gate-source limit 20V to protect drive circuitry

Applications

• Suitable for synchronous buck converter stages
• Ideal for motor-drive half-bridge assemblies
• Used with high-current DC-DC converters
• Can be used for server power distribution modules
• Appropriate for telecom rectification and switchgear

What thermal extremes can the device tolerate in operation?

It is specified to function reliably from -55 °C up to 150 °C, allowing use in demanding thermal environments.

How many pins and what mounting style does it use?

The package contains eight pins and is delivered in a TDSON surface-mount format for compact PCB placement.

What channel type and mode are implemented for switching?

The transistor uses an N-type channel in enhancement mode, requiring a positive gate drive to conduct.

Which physical dimensions affect board layout and placement?

The body measures 5.49mm in length, 6.35mm in width and 1.1mm in height, informing footprint and clearance design.