제조사부품번호

Infineon Dual IRF7343PbF 1 Type P, Type N-Channel MOSFET, 4.7 A, 55 V Depletion, 8-Pin SO-8 IRF7343TRPBF

RS 제품 번호:: 171-1915
제조사 부품 번호:: IRF7343TRPBF
제조업체:: Infineon

Infineon Dual IRF7343PbF 1 Type P, Type N-Channel MOSFET, 4.7 A, 55 V Depletion, 8-Pin SO-8 IRF7343TRPBF

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RS 제품 번호:: 171-1915
제조사 부품 번호:: IRF7343TRPBF
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type P, Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	4.7A
	Maximum Drain Source Voltage Vds	55V
	Series	IRF7343PbF
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	170mΩ
	Channel Mode	Depletion
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.96V
	Typical Gate Charge Qg @ Vgs	24nC
	Transistor Configuration	Dual
	Maximum Operating Temperature	150°C
	Length	5mm
	Height	1.5mm
	Width	4 mm
	Standards/Approvals	No
	Number of Elements per Chip	1
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type P, Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 4.7A
	Maximum Drain Source Voltage Vds 55V
	Series IRF7343PbF
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 170mΩ
	Channel Mode Depletion
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.96V
	Typical Gate Charge Qg @ Vgs 24nC
	Transistor Configuration Dual
	Maximum Operating Temperature 150°C
	Length 5mm
	Height 1.5mm
	Width 4 mm
	Standards/Approvals No
	Number of Elements per Chip 1
	Automotive Standard No

The Infineon IRF7343 is the 55V dual N- and P- channel HEXFET power MOSFET in a SO-8 package.

RoHS Compliant

Low RDS(on)

Dynamic dv/dt rating

Fast switching

Infineon Dual IRF7343PbF 1 Type P, Type N-Channel MOSFET, 4.7 A, 55 V Depletion, 8-Pin SO-8 IRF7343TRPBF

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