Vishay SQ Rugged N-Channel MOSFET, 32 A, 40 V Enhancement, 5-Pin SO-8 SQJ412EP-T1_GE3

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RS 제품 번호:
170-8303
제조사 부품 번호:
SQJ412EP-T1_GE3
제조업체:
Vishay
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브랜드

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

32A

Maximum Drain Source Voltage Vds

40V

Package Type

SO-8

Series

SQ Rugged

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

8.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

800mV

Maximum Gate Source Voltage Vgs

-20V, +20V

Maximum Power Dissipation Pd

83W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

5mm

Width

5.03mm

Standards/Approvals

No

Height

1.14mm

Automotive Standard

AEC-Q101

N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor


The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.

Advantages of SQ Rugged Series MOSFETs


• AEC-Q101 qualified

• Junction temperature up to +175°C

• Low on-resistance n- and p-channel TrenchFET® technologies

• Innovative space-saving package options

MOSFET Transistors, Vishay Semiconductor


Approvals

AEC-Q101

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