제조사부품번호

Vishay SQJ162EP N-Channel MOSFET, 166 A, 60 V Enhancement, 4-Pin SO-8L SQJ162EP-T1_GE3

RS 제품 번호:: 280-0018
제조사 부품 번호:: SQJ162EP-T1_GE3
제조업체:: Vishay

Vishay SQJ162EP N-Channel MOSFET, 166 A, 60 V Enhancement, 4-Pin SO-8L SQJ162EP-T1_GE3

Subtotal (3000 units, on reels of 3000)*

₩3,804,000.00

마지막 RS 재고

최종적인 3,000 개 unit(s)이 배송 준비 됨

수량	한팩당	릴당*
3000 +	₩1,268.00	₩3,802,200.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 280-0018
제조사 부품 번호:: SQJ162EP-T1_GE3
제조업체:: Vishay

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	166A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SO-8L
	Series	SQJ162EP
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	0.005Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	250W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	34nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	175°C
	Standards/Approvals	AEC-Q101
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Vishay
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 166A
	Maximum Drain Source Voltage Vds 60V
	Package Type SO-8L
	Series SQJ162EP
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 0.005Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 250W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 34nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 175°C
	Standards/Approvals AEC-Q101
	Automotive Standard AEC-Q101

Datasheet - SQJ162EP-T1_GE3

The Vishay Automotive MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

AEC-Q101 qualified

Fully lead (Pb)-free device

Vishay SQJ162EP N-Channel MOSFET, 166 A, 60 V Enhancement, 4-Pin SO-8L SQJ162EP-T1_GE3

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