Vishay Isolated TrenchFET 2 N-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SOIC SQ4920EY-T1_GE3
- RS 제품 번호:
- 170-8297
- 제조사 부품 번호:
- SQ4920EY-T1_GE3
- 제조업체:
- Vishay
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- RS 제품 번호:
- 170-8297
- 제조사 부품 번호:
- SQ4920EY-T1_GE3
- 제조업체:
- Vishay
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참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 750mV | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 4.4W | |
| Typical Gate Charge Qg @ Vgs | 19.7nC | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Width | 4mm | |
| Height | 1.5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 750mV | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 4.4W | ||
Typical Gate Charge Qg @ Vgs 19.7nC | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Standards/Approvals No | ||
Width 4mm | ||
Height 1.5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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