Infineon IPB64N25S3-20 N-Channel MOSFET, 64 A, 250 V Enhancement, 3-Pin TO-263 IPB64N25S320ATMA1

RS 제품 번호:: 170-2295
제조사 부품 번호:: IPB64N25S320ATMA1
제조업체:: Infineon

Infineon IPB64N25S3-20 N-Channel MOSFET, 64 A, 250 V Enhancement, 3-Pin TO-263 IPB64N25S320ATMA1

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5000개 더 담고 ₩580,000.00 할인 받기

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Subtotal (1 reel of 1000 units)*

₩5,828,000.00

일시적 품절

2027년 2월 03일 부터 배송

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수량	한팩당	릴당*	절감
1000 - 4000	₩5,828.00	₩5,829,000.00	-
5000 +	₩5,712.00	₩5,712,400.00	₩580,000.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 170-2295
제조사 부품 번호:: IPB64N25S320ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	64A
	Maximum Drain Source Voltage Vds	250V
	Series	IPB64N25S3-20
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	20mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	300W
	Typical Gate Charge Qg @ Vgs	67nC
	Maximum Operating Temperature	175°C
	Length	10mm
	Height	4.4mm
	Width	10.25mm
	Standards/Approvals	No
	Automotive Standard	AEC

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 64A
	Maximum Drain Source Voltage Vds 250V
	Series IPB64N25S3-20
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 20mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 300W
	Typical Gate Charge Qg @ Vgs 67nC
	Maximum Operating Temperature 175°C
	Length 10mm
	Height 4.4mm
	Width 10.25mm
	Standards/Approvals No
	Automotive Standard AEC

Infineon IPB64N25S3-20 Series MOSFET, 250V Maximum Drain Source Voltage, 64A Maximum Continuous Drain Current - IPB64N25S320ATMA1

This MOSFET is a high-voltage N-channel semiconductor device designed for switching and power-conversion roles in demanding electronic systems. It operates across a very wide temperature span and is built for surface-mount deployment in a TO-263 package, making it suitable for compact assemblies where robust power handling is required.

Features and Benefits:

• 250V drain rating enables high-voltage switching capability
• 64A continuous drain current supports heavy current loads
• 20mΩ Rds(on) minimises conduction losses during operation
• 300W power dissipation allows sustained thermal loading
• 67nC typical gate charge ensures predictable switching behaviour
• 20V gate voltage rating maintains safe gate-drive margins

Applications

• Ideal for automotive power-conversion modules
• Suitable for high-current DC-DC converters
• Used with motor-drive inverter stages
• Can be used for server and telecoms power supplies
• Suitable for high-temperature industrial electronics

What thermal range can this device tolerate in harsh environments?

It functions across -55°C to 175°C ambient endpoints, allowing use in extreme-temperature applications and reducing the need for extensive thermal protection.

How does the package influence PCB assembly and cooling?

The TO-263 surface-mount form factor provides a low-profile mounting option and presents a large thermal pad for heat transfer to heatsinks or copper pours on the PCB.

What gate-drive considerations are required for reliable switching?

A gate-source rating of 20V sets the maximum permissible gate drive

designers should select gate voltages within this limit and account for the 67nC gate charge when sizing drivers.

How does the device type affect circuit topology choices?

As an enhancement-mode N-channel MOSFET, it needs a positive gate drive relative to the source for conduction, making it appropriate for low-side switching and synchronous rectification arrangements.