STMicroelectronics Type N-Channel MOSFET, 45 A, 1200 V Enhancement, 3-Pin Hip-247
- RS 제품 번호:
- 168-8966
- 제조사 부품 번호:
- SCT30N120
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 tube of 30 units)*
₩1,039,452.00
마지막 RS 재고
- 최종적인 300 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 30 - 120 | ₩34,648.40 | ₩1,039,468.92 |
| 150 + | ₩33,956.56 | ₩1,018,679.88 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 168-8966
- 제조사 부품 번호:
- SCT30N120
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 270W | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 3.5V | |
| Maximum Operating Temperature | 200°C | |
| Width | 5.15 mm | |
| Height | 20.15mm | |
| Standards/Approvals | No | |
| Length | 15.75mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 270W | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 3.5V | ||
Maximum Operating Temperature 200°C | ||
Width 5.15 mm | ||
Height 20.15mm | ||
Standards/Approvals No | ||
Length 15.75mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics
Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and Compact systems.
MOSFET Transistors, STMicroelectronics
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