onsemi QFET Type P-Channel MOSFET, 47 A, 60 V Enhancement, 3-Pin TO-263 FQB47P06TM-AM002

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₩26,282.40

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5 - 35₩5,256.48₩26,282.40
40 +₩5,068.48₩25,342.40

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포장 옵션
RS 제품 번호:
671-0905
제조사 부품 번호:
FQB47P06TM-AM002
제조업체:
onsemi
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브랜드

onsemi

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

47A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263

Series

QFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

26mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

3.75W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-4V

Maximum Gate Source Voltage Vgs

25 V

Typical Gate Charge Qg @ Vgs

84nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.67mm

Height

4.83mm

Width

9.65 mm

Automotive Standard

No

Enhancement Mode P-Channel MOSFET, ON Semiconductor


ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:


• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:


• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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