Vishay TrenchFET N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin SO-8 SIRA06DP-T1-GE3

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RS 제품 번호:
165-7074
제조사 부품 번호:
SIRA06DP-T1-GE3
제조업체:
Vishay
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브랜드

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

62.5W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-16V, +20V

Typical Gate Charge Qg @ Vgs

51nC

Forward Voltage Vf

0.73V

Maximum Operating Temperature

150°C

Length

6.25mm

Standards/Approvals

No

Width

5.26mm

Height

1.12mm

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


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