Vishay TrenchFET N-Channel MOSFET, 58 A, 30 V Enhancement, 8-Pin SO-8 SIRA14DP-T1-GE3

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RS 제품 번호:
165-6980
제조사 부품 번호:
SIRA14DP-T1-GE3
제조업체:
Vishay
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브랜드

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

58A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

8.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

19.4nC

Maximum Power Dissipation Pd

31.2W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-16V, +20V

Forward Voltage Vf

0.76V

Maximum Operating Temperature

150°C

Height

1.12mm

Length

6.25mm

Width

5.26mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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