Infineon HEXFET Type N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-263

RS 제품 번호:: 165-5896
제조사 부품 번호:: IRF540NSTRRPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-263

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 reel of 800 units)*

₩964,064.00

일시적 품절

2026년 10월 02일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
800 - 3200	₩1,205.08	₩964,665.60
4000 +	₩1,084.76	₩868,259.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 165-5896
제조사 부품 번호:: IRF540NSTRRPBF
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	33A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	44mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	71nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	130W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Length	10.67mm
	Standards/Approvals	No
	Height	4.83mm
	Width	9.65 mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 33A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 44mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 71nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 130W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Length 10.67mm
	Standards/Approvals No
	Height 4.83mm
	Width 9.65 mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - IRF540NSTRRPBF

This N-channel power MOSFET is specifically designed for high-efficiency applications, delivering significant performance in various electronic systems. It excels in high-current environments, where reliability and low resistance are essential. Its enhancements make it particularly useful in industries focused on automation and power management.

Features & Benefits

• Low RDS(on) minimises power losses during operation

• Continuous drain current capability of 33A supports various applications

• Wide gate-source voltage range provides design flexibility

• Withstands high temperatures up to 175°C

• Fast switching improves overall circuit efficiency

• D2PAK surface mount design facilitates PCB integration

Applications

• Used in power management circuits for automation

• Commonly implemented in DC-DC converters for energy efficiency

• Suitable for motor drive that require high current

• Found in power supply modules for industrial electronics

• Appropriate for automotive due to robust thermal performance

What is the significance of low RDS(on) in operation?

Low RDS(on) reduces heat generation and enhances energy efficiency, which is Crucial for extending component life and lowering operating expenses.

How does the MOSFET perform at higher temperatures?

It operates reliably up to 175°C, ensuring stability in extreme conditions while meeting performance demands without failure.

Can this device handle pulsed currents, and what are the specifications?

It supports pulsed drain currents up to 110A, effectively managing short bursts of high power, making it Ideal for applications with fluctuating load conditions.

What are the implications of the specified gate threshold voltage?

The gate threshold voltage range of 2V to 4V indicates the voltage needed to start conduction, providing essential information for design integration in control circuits.

How does the D2PAK package affect its usability?

The D2PAK package design promotes efficient heat dissipation and simplifies surface mount assembly, making it suitable for high-power applications on Compact PCBs.