Infineon HEXFET Type N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-220 IRF540NPBF

RS 제품 번호:: 914-8154
제조사 부품 번호:: IRF540NPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-220 IRF540NPBF

대량 구매 할인 기용 가능

Subtotal (1 pack of 20 units)*

₩21,507.20

재고있음

1,520 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
20 - 80	₩1,075.36	₩21,488.40
100 - 280	₩1,056.56	₩21,131.20
300 - 580	₩1,030.24	₩20,586.00
600 - 2980	₩1,003.92	₩20,078.40
3000 +	₩827.20	₩16,525.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 914-8154
제조사 부품 번호:: IRF540NPBF
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	33A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	44mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	71nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	130W
	Maximum Operating Temperature	175°C
	Width	4.69 mm
	Standards/Approvals	No
	Length	10.54mm
	Height	8.77mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 33A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 44mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 71nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 130W
	Maximum Operating Temperature 175°C
	Width 4.69 mm
	Standards/Approvals No
	Length 10.54mm
	Height 8.77mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 100V Maximum Drain Source Voltage - IRF540NPBF

This MOSFET is designed to provide efficient switching capabilities and power management in various electronic applications. The device operates with a maximum continuous drain current of 33A and a maximum drain-source voltage of 100V. Housed in a TO-220AB package, this component is well-suited for both industrial and commercial uses, ensuring longevity and reliability under a range of environmental conditions.

Features & Benefits

• Utilises advanced processing for low on-resistance

• Supports fast switching speeds for efficient operation

• Fully avalanche rated for enhanced reliability under harsh conditions

• Offers a wide gate threshold voltage range for flexibility

• Designed for through-hole mounting for easy installation

Applications

• Ideal for high current switching in power supplies

• Used in automation and control systems

• Suitable for motor control and driving circuits

• Effective in inverters and converters for renewable energy systems

What is the significance of the low RDS(on) in this device?

A low RDS(on) improves efficiency by reducing power loss during operation, enabling better thermal management and enhancing overall performance in high-current applications.

How does the enhancement mode functionality influence its use?

The enhancement mode allows for low current operation until a specific gate voltage is applied, making it reliable for switching applications where precise control is essential.

What is the importance of the TO-220AB package design?

The TO-220AB package ensures effective heat dissipation, supporting high power dissipation levels while maintaining ease of mounting in various circuit configurations.

How does this MOSFET perform in extreme temperatures?

Operating effectively between -55°C to +175°C, it is designed to maintain performance in demanding environments, ensuring reliability even under challenging conditions.

What type of switching applications is this suitable for?

It is well-suited for powering loads in applications requiring rapid switching, such as motor drive systems, power converters, and various electronic control circuits.