제조사부품번호

Nexperia Type N-Channel MOSFET, 3.2 A, 30 V Enhancement, 4-Pin DFN PMXB56ENZ

RS 제품 번호:: 153-1892
제조사 부품 번호:: PMXB56ENZ
제조업체:: Nexperia

Nexperia Type N-Channel MOSFET, 3.2 A, 30 V Enhancement, 4-Pin DFN PMXB56ENZ

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대량 구매 할인 기용 가능

Subtotal (1 pack of 25 units)*

₩10,669.00

일시적 품절

2026년 7월 06일 부터 배송

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수량	한팩당	한팩당*
25 - 1225	₩426.76	₩10,678.40
1250 - 2475	₩417.36	₩10,415.20
2500 +	₩409.84	₩10,246.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 153-1892
제조사 부품 번호:: PMXB56ENZ
제조업체:: Nexperia

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Nexperia
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	3.2A
	Maximum Drain Source Voltage Vds	30V
	Package Type	DFN
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	87mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	8.33W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	3.6nC
	Maximum Operating Temperature	150°C
	Width	1.05 mm
	Length	1.15mm
	Height	0.36mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Nexperia
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 3.2A
	Maximum Drain Source Voltage Vds 30V
	Package Type DFN
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 87mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 8.33W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 3.6nC
	Maximum Operating Temperature 150°C
	Width 1.05 mm
	Length 1.15mm
	Height 0.36mm
	Standards/Approvals No
	Automotive Standard No

N-channel MOSFETs 25 V - 30 V, Robust performance thanks to Advanced technology know-how, Easy-to-use MOSFETs in the 25 V to 30 V range. Perfect for space- and power-critical applications, they offer excellent switching performance and class-leading safe operating area (SOA). Need a different voltage rating? Check out the rest of our huge portfolio for more options.

30 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm

Exposed drain pad for excellent thermal conduction

Very low Drain-Source on-state resistance RDSon = 49 mΩ

Very fast switching

Low-side load switch and charging switch for portable devices

Power management in battery-driven portables

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Nexperia Type N-Channel MOSFET, 3.2 A, 30 V Enhancement, 4-Pin DFN PMXB56ENZ

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