제조사부품번호

Nexperia Type P-Channel MOSFET, -2.4 A, -30 V Enhancement, 4-Pin DFN PMXB120EPEZ

RS 제품 번호:: 151-3227
제조사 부품 번호:: PMXB120EPEZ
제조업체:: Nexperia

Nexperia Type P-Channel MOSFET, -2.4 A, -30 V Enhancement, 4-Pin DFN PMXB120EPEZ

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대량 구매 할인 기용 가능

Subtotal (1 pack of 25 units)*

₩11,609.00

일시적 품절

2026년 5월 27일 부터 9,600 개 단위 배송

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수량	한팩당	한팩당*
25 - 1225	₩464.36	₩11,618.40
1250 - 2475	₩453.08	₩11,317.60
2500 +	₩445.56	₩11,148.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 151-3227
제조사 부품 번호:: PMXB120EPEZ
제조업체:: Nexperia

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Nexperia
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	-2.4A
	Maximum Drain Source Voltage Vds	-30V
	Package Type	DFN
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	187mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	6.2nC
	Maximum Power Dissipation Pd	8.33W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	0.36mm
	Length	1.15mm
	Width	1.05 mm
	Automotive Standard	No

	모두 선택
	브랜드 Nexperia
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id -2.4A
	Maximum Drain Source Voltage Vds -30V
	Package Type DFN
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 187mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 6.2nC
	Maximum Power Dissipation Pd 8.33W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 0.36mm
	Length 1.15mm
	Width 1.05 mm
	Automotive Standard No

P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.

30 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm

Exposed drain pad for excellent thermal conduction

ElectroStatic Discharge (ESD) protection 1 kV HBM

Drain-source on-state resistance RDSon = 350 mΩ

Nexperia Type P-Channel MOSFET, -2.4 A, -30 V Enhancement, 4-Pin DFN PMXB120EPEZ

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