제조사부품번호

Nexperia Dual Trench MOSFET 2 Type P-Channel Trench MOSFET, 500 mA, -20 V Enhancement, 8-Pin DFN PMDXB950UPELZ

RS 제품 번호:: 152-8344
제조사 부품 번호:: PMDXB950UPELZ
제조업체:: Nexperia

Nexperia Dual Trench MOSFET 2 Type P-Channel Trench MOSFET, 500 mA, -20 V Enhancement, 8-Pin DFN PMDXB950UPELZ

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대량 구매 할인 기용 가능

Subtotal (1 pack of 25 units)*

₩10,810.00

재고있음

추가로 2025년 12월 29일 부터 7,075 개 단위 배송

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수량	한팩당	한팩당*
25 - 1225	₩432.40	₩10,810.00
1250 - 2475	₩421.12	₩10,546.80
2500 +	₩415.48	₩10,377.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 152-8344
제조사 부품 번호:: PMDXB950UPELZ
제조업체:: Nexperia

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Nexperia
	Channel Type	Type P
	Product Type	Trench MOSFET
	Maximum Continuous Drain Current Id	500mA
	Maximum Drain Source Voltage Vds	-20V
	Package Type	DFN
	Series	Trench MOSFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3.5Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	1.19nC
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Power Dissipation Pd	4025mW
	Minimum Operating Temperature	150°C
	Maximum Operating Temperature	-55°C
	Transistor Configuration	Dual
	Length	1.15mm
	Width	1.05 mm
	Height	0.36mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	No

	모두 선택
	브랜드 Nexperia
	Channel Type Type P
	Product Type Trench MOSFET
	Maximum Continuous Drain Current Id 500mA
	Maximum Drain Source Voltage Vds -20V
	Package Type DFN
	Series Trench MOSFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3.5Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 1.19nC
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Power Dissipation Pd 4025mW
	Minimum Operating Temperature 150°C
	Maximum Operating Temperature -55°C
	Transistor Configuration Dual
	Length 1.15mm
	Width 1.05 mm
	Height 0.36mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard No

P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.

20 V, dual P-channel Trench MOSFET, Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Low leakage current

Trench MOSFET technology

Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm

Exposed drain pad for excellent thermal conduction

ElectroStatic Discharge (ESD) protection > 1 kV HBM

Drain-source on-state resistance RDSon = 1.02 Ω

Relay driver

High-speed line driver

High-side load switch

Switching circuits

Nexperia Dual Trench MOSFET 2 Type P-Channel Trench MOSFET, 500 mA, -20 V Enhancement, 8-Pin DFN PMDXB950UPELZ

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