제조사부품번호

Nexperia Type P-Channel MOSFET, -3.2 A, -12 V Enhancement, 4-Pin DFN

RS 제품 번호:: 151-3036
제조사 부품 번호:: PMXB65UPEZ
제조업체:: Nexperia

Nexperia Type P-Channel MOSFET, -3.2 A, -12 V Enhancement, 4-Pin DFN

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대량 구매 할인 기용 가능

Subtotal (1 reel of 5000 units)*

₩695,600.00

일시적 품절

2026년 5월 06일 부터 10,000 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
5000 - 5000	₩139.12	₩693,720.00
10000 - 15000	₩135.36	₩679,620.00
20000 +	₩133.48	₩666,460.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 151-3036
제조사 부품 번호:: PMXB65UPEZ
제조업체:: Nexperia

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Nexperia
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-3.2A
	Maximum Drain Source Voltage Vds	-12V
	Package Type	DFN
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	880mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Power Dissipation Pd	8.33W
	Typical Gate Charge Qg @ Vgs	6.7nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	1.05 mm
	Length	1.15mm
	Height	0.36mm
	Automotive Standard	No

	모두 선택
	브랜드 Nexperia
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id -3.2A
	Maximum Drain Source Voltage Vds -12V
	Package Type DFN
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 880mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Power Dissipation Pd 8.33W
	Typical Gate Charge Qg @ Vgs 6.7nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 1.05 mm
	Length 1.15mm
	Height 0.36mm
	Automotive Standard No

P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.

12 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm

Exposed drain pad for excellent thermal conduction

ElectroStatic Discharge (ESD) protection 1.5 kV HBM

Drain-source on-state resistance RDSon = 59 mΩ

Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V

Nexperia Type P-Channel MOSFET, -3.2 A, -12 V Enhancement, 4-Pin DFN

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