IXYS HiperFET Type N-Channel MOSFET, 90 A, 850 V Enhancement, 3-Pin PLUS264 IXFB90N85X
- RS 제품 번호:
- 146-4246
- 제조사 부품 번호:
- IXFB90N85X
- 제조업체:
- IXYS
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 tube of 25 units)*
₩1,279,900.00
일시적 품절
- 2027년 9월 10일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 25 - 100 | ₩51,196.00 | ₩1,279,900.00 |
| 125 + | ₩46,076.00 | ₩1,151,920.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 146-4246
- 제조사 부품 번호:
- IXFB90N85X
- 제조업체:
- IXYS
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Series | HiperFET | |
| Package Type | PLUS264 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Maximum Power Dissipation Pd | 1.79kW | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 340nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5.31mm | |
| Length | 20.29mm | |
| Height | 26.59mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 850V | ||
Series HiperFET | ||
Package Type PLUS264 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Maximum Power Dissipation Pd 1.79kW | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 340nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5.31mm | ||
Length 20.29mm | ||
Height 26.59mm | ||
Automotive Standard No | ||
The 850V Ultra-Junction X-Class Power MOSFETs with fast body diodes represent a new power semiconductor product line from IXYS Corporation. These rugged devices display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, the new 850V devices exhibit the lowest on-state resistances (33 milliohm in the SOT-227 package and 41 milliohm in the PLUS264, for instance), along with low gate charges and superior dv/dt performance.
Ultra low on-resistance RDS(ON) and gate charge Qg
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
관련된 링크들
- IXYS HiperFET Type N-Channel MOSFET, 90 A, 850 V Enhancement, 3-Pin PLUS264
- IXYS HiperFET, Polar3 Type N-Channel MOSFET, 210 A, 300 V Enhancement, 3-Pin PLUS264 IXFB210N30P3
- IXYS HiperFET, Polar3 Type N-Channel MOSFET, 132 A, 500 V Enhancement, 3-Pin PLUS264 IXFB132N50P3
- IXYS HiperFET, Polar3 Type N-Channel MOSFET, 110 A, 600 V Enhancement, 3-Pin PLUS264 IXFB110N60P3
- IXYS Single HiperFET, Q3-Class 1 Type N-Channel MOSFET, 82 A, 600 V Enhancement, 3-Pin PLUS264 IXFB82N60Q3
- IXYS HiperFET, Polar3 Type N-Channel MOSFET, 110 A, 600 V Enhancement, 3-Pin PLUS264
- IXYS HiperFET, Polar3 Type N-Channel MOSFET, 210 A, 300 V Enhancement, 3-Pin PLUS264
- IXYS HiperFET, Polar3 Type N-Channel MOSFET, 132 A, 500 V Enhancement, 3-Pin PLUS264