IXYS HiperFET N-Channel MOSFET, 66 A, 850 V Enhancement, 3-Pin TO-264 IXFK66N85X
- RS 제품 번호:
- 146-4374
- Distrelec 제품 번호:
- 302-53-353
- 제조사 부품 번호:
- IXFK66N85X
- 제조업체:
- IXYS
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- RS 제품 번호:
- 146-4374
- Distrelec 제품 번호:
- 302-53-353
- 제조사 부품 번호:
- IXFK66N85X
- 제조업체:
- IXYS
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | IXYS | |
| Series | HiperFET | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 66 A | |
| Maximum Drain Source Voltage (Vds) | 850 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-264 | |
| Automotive Standard | No | |
| Distrelec Product Id | 30253353 | |
| Forward Voltage (Vf) | 1.4 V | |
| Height | 26.3 mm | |
| Length | 20.3 mm | |
| Maximum Drain Source Resistance (Rds) | 65 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 30 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 1.25 kW | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Through Hole | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 230 nC | |
| Width | 5.3 mm | |
| 모두 선택 | ||
|---|---|---|
브랜드 IXYS | ||
Series HiperFET | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 66 A | ||
Maximum Drain Source Voltage (Vds) 850 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-264 | ||
Automotive Standard No | ||
Distrelec Product Id 30253353 | ||
Forward Voltage (Vf) 1.4 V | ||
Height 26.3 mm | ||
Length 20.3 mm | ||
Maximum Drain Source Resistance (Rds) 65 mΩ | ||
Maximum Gate Source Voltage (Vgs) 30 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 1.25 kW | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Through Hole | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 230 nC | ||
Width 5.3 mm | ||
The 850V Ultra-Junction X-Class Power MOSFETs with fast body diodes represent a new power semiconductor product line from IXYS Corporation. These rugged devices display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, the new 850V devices exhibit the lowest on-state resistances (33 milliohm in the SOT-227 package and 41 milliohm in the PLUS264, for instance), along with low gate charges and superior dv/dt performance.
Ultra low on-resistance RDS(ON) and gate charge Qg
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
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