제조사부품번호

IXYS HiperFET Type N-Channel MOSFET, 90 A, 850 V Enhancement, 4-Pin SOT-227 IXFN90N85X

RS 제품 번호:: 146-4248
제조사 부품 번호:: IXFN90N85X
제조업체:: IXYS

IXYS HiperFET Type N-Channel MOSFET, 90 A, 850 V Enhancement, 4-Pin SOT-227 IXFN90N85X

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대량 구매 할인 기용 가능

Subtotal (1 tube of 10 units)*

₩883,600.00

일시적 품절

2026년 6월 10일 부터 10 개 단위 배송

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수량	한팩당	Per Tube*
10 - 10	₩88,360.00	₩883,600.00
20 - 30	₩86,592.80	₩865,928.00
40 +	₩84,859.44	₩848,594.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 146-4248
제조사 부품 번호:: IXFN90N85X
제조업체:: IXYS

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	IXYS
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	90A
	Maximum Drain Source Voltage Vds	850V
	Series	HiperFET
	Package Type	SOT-227
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	41mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30 V
	Forward Voltage Vf	1.4V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.2kW
	Typical Gate Charge Qg @ Vgs	340nC
	Maximum Operating Temperature	150°C
	Width	25.07 mm
	Standards/Approvals	No
	Length	38.23mm
	Height	9.6mm
	Automotive Standard	No

	모두 선택
	브랜드 IXYS
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 90A
	Maximum Drain Source Voltage Vds 850V
	Series HiperFET
	Package Type SOT-227
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 41mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30 V
	Forward Voltage Vf 1.4V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.2kW
	Typical Gate Charge Qg @ Vgs 340nC
	Maximum Operating Temperature 150°C
	Width 25.07 mm
	Standards/Approvals No
	Length 38.23mm
	Height 9.6mm
	Automotive Standard No

The 850V Ultra-Junction X-Class Power MOSFETs with fast body diodes represent a new power semiconductor product line from IXYS Corporation. These rugged devices display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, the new 850V devices exhibit the lowest on-state resistances (33 milliohm in the SOT-227 package and 41 milliohm in the PLUS264, for instance), along with low gate charges and superior dv/dt performance.

Ultra low on-resistance RDS(ON) and gate charge Qg

Fast body diode

dv/dt ruggedness

Avalanche rated

Low package inductance

International standard packages

IXYS HiperFET Type N-Channel MOSFET, 90 A, 850 V Enhancement, 4-Pin SOT-227 IXFN90N85X

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