제조사부품번호

Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-220

RS 제품 번호:: 145-8608
제조사 부품 번호:: IRFB4020PBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-220

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대량 구매 할인 기용 가능

Subtotal (1 tube of 50 units)*

₩47,470.00

일시적 품절

750 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
50 - 200	₩949.40	₩47,432.40
250 +	₩919.32	₩46,003.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 145-8608
제조사 부품 번호:: IRFB4020PBF
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	200V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	100mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	100W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	18nC
	Maximum Operating Temperature	175°C
	Width	4.82 mm
	Standards/Approvals	No
	Height	9.02mm
	Length	10.66mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 200V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 100mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 100W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 18nC
	Maximum Operating Temperature 175°C
	Width 4.82 mm
	Standards/Approvals No
	Height 9.02mm
	Length 10.66mm
	Automotive Standard No

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