Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

₩47,470.00

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Units
Per unit
Per Tube*
50 - 200₩949.40₩47,432.40
250 +₩919.32₩46,003.60

*price indicative

RS Stock No.:
145-8608
Mfr. Part No.:
IRFB4020PBF
Brand:
Infineon
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

18nC

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

100W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Length

10.66mm

Standards/Approvals

No

Width

4.82 mm

Height

9.02mm

Automotive Standard

No

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