onsemi PowerTrench Dual N-Channel MOSFET, 1.2 A, 20 V, 6-Pin SOT-363 FDG1024NZ

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RS 제품 번호:
145-5680
제조사 부품 번호:
FDG1024NZ
제조업체:
onsemi
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모두 선택

브랜드

onsemi

Channel Type

N

Maximum Continuous Drain Current

1.2 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-363

Series

PowerTrench

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

259 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

300 mW, 360 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

2

Width

1.25mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

1.8 nC @ 4.5 V

Length

2mm

Height

1mm

Minimum Operating Temperature

-55 °C

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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