onsemi Isolated PowerTrench 2 Type N, Type N-Channel MOSFET, 1.2 A, 20 V Enhancement, 6-Pin SOT-363 FDG1024NZ
- RS 제품 번호:
- 145-5680
- 제조사 부품 번호:
- FDG1024NZ
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
현재 비가용
RS는 이 제품을 더 이상 판매하지 않습니다.
- RS 제품 번호:
- 145-5680
- 제조사 부품 번호:
- FDG1024NZ
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type N | |
| Maximum Continuous Drain Current Id | 1.2A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-363 | |
| Series | PowerTrench | |
| Mount Type | Surface, Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 259mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.7V | |
| Typical Gate Charge Qg @ Vgs | 1.8nC | |
| Maximum Power Dissipation Pd | 360mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Length | 2mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N, Type N | ||
Maximum Continuous Drain Current Id 1.2A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-363 | ||
Series PowerTrench | ||
Mount Type Surface, Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 259mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.7V | ||
Typical Gate Charge Qg @ Vgs 1.8nC | ||
Maximum Power Dissipation Pd 360mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Height 1mm | ||
Standards/Approvals No | ||
Length 2mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
관련된 링크들
- onsemi Isolated PowerTrench 2 Type N, Type N-Channel MOSFET, 1.2 A, 20 V Enhancement, 6-Pin SOT-363 FDG1024NZ
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 5 A, 20 V Enhancement, 6-Pin MLP FDMA1024NZ
- onsemi Isolated 2 Type N-Channel MOSFET, 500 mA, 25 V Enhancement, 6-Pin SOT-363 FDG6303N
- onsemi Isolated 2 Type N, Type N, Type P, Type P-Channel MOSFET, 700 mA, 20 V Enhancement, 6-Pin SOT-363 FDG6332C
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 5 A, 20 V Enhancement, 6-Pin MLP
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 3.8 A, 20 V Enhancement, 6-Pin MicroFET FDME1024NZT
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 3.8 A, 20 V Enhancement, 6-Pin MicroFET
- onsemi PowerTrench Type N-Channel MOSFET, 9.5 A, 20 V Enhancement, 6-Pin MLP FDMA410NZ