Infineon HEXFET Type N-Channel MOSFET, 104 A, 150 V Enhancement, 3-Pin TO-220

RS 제품 번호:: 124-9005
제조사 부품 번호:: IRFB4115PBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 104 A, 150 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

₩251,700.00

800 개 단위 배송 준비 완료

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수량	한팩당	Per Tube*
50 - 50	₩5,034.00	₩251,740.00
100 - 150	₩4,926.00	₩246,260.00
200 +	₩4,816.00	₩240,760.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 124-9005
제조사 부품 번호:: IRFB4115PBF
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	104A
	Maximum Drain Source Voltage Vds	150V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	11mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	380W
	Typical Gate Charge Qg @ Vgs	77nC
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Length	10.67mm
	Height	9.02mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 104A
	Maximum Drain Source Voltage Vds 150V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 11mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 380W
	Typical Gate Charge Qg @ Vgs 77nC
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Length 10.67mm
	Height 9.02mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: MX

Infineon HEXFET Series MOSFET, 150V Maximum Drain Source Voltage, 104A Maximum Continuous Drain Current - IRFB4115PBF

This MOSFET is a high-power N-channel enhancement device designed for switching and power-conversion tasks in demanding electronic systems. It operates across a wide thermal range suitable for challenging environments and is supplied in a through-hole TO-220 package for straightforward heatsinking and assembly. The device delivers substantial continuous drain current capability and is intended for applications requiring efficient high-current handling and rapid switching performance.

Features and Benefits:

• 150V maximum drain voltage enables high-voltage switching
• 104A continuous drain current supports heavy load handling
• 11 mΩ low RDS(on) minimises conduction losses at high current
• 380W power dissipation allows sustained thermal load
• 77 nC typical gate charge enables fast switching transitions
• 1.3V forward voltage reduces diode conduction drop

Applications

• Suitable for Infineon HEXFET 150V MOSFET TO-220 motor drivers
• Ideal for 150V 104A MOSFETs for switch-mode power supplies
• Used with high-power N-channel enhancement MOSFET circuits
• Can be used for TO-220 through-hole MOSFET 380W power stages

What gate voltage limits should designers observe?

The gate-to-source rating is ±20V, so drive circuits must keep VGS within that range to avoid gate damage.

How does the device perform over temperature extremes?

It is specified to operate from -55 °C to 175 °C, ensuring electrical characteristics are maintained across those ambient and junction conditions.

What mounting and pin-count considerations apply?

The component has three pins and is intended for through-hole mounting in a TO-220 format to facilitate secure heatsink attachment.

What channel and conduction mode does it use?

It is an N-channel device operating in enhancement mode, requiring a positive gate relative to source to turn on.