Vishay TrenchFET Gen IV N channel-Channel MOSFET, 361 A, 80 V Enhancement, 8-Pin PowerPAK 10 x 12 SiJK4810E
- RS 제품 번호:
- 931-761
- 제조사 부품 번호:
- SiJK4810E
- 제조업체:
- Vishay
N
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10개 더 담고 ₩46,900.00 할인 받기
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₩12,328.00
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- 2027년 4월 08일 부터 배송
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Tape(s) | Per Tape | 절감 |
|---|---|---|
| 1 - 9 | ₩12,328.00 | - |
| 10 - 49 | ₩7,638.00 | ₩46,900.00 |
| 50 - 99 | ₩4,646.00 | ₩384,100.00 |
| 100 + | ₩4,534.00 | ₩779,400.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 931-761
- 제조사 부품 번호:
- SiJK4810E
- 제조업체:
- Vishay
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 361A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | TrenchFET Gen IV | |
| Package Type | PowerPAK 10 x 12 | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0018Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 162nC | |
| Maximum Power Dissipation Pd | 446W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | ROHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 361A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series TrenchFET Gen IV | ||
Package Type PowerPAK 10 x 12 | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0018Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 162nC | ||
Maximum Power Dissipation Pd 446W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals ROHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay N-Channel 80 V MOSFET designed to enhance power management in various applications, providing efficient conduction with reduced power loss.
Utilises TrenchFET Gen IV technology for minimal power loss
Exhibits a low on-state resistance of 0.0018 Ohm at 10 V gate-source voltage
Features Kelvin connection to reduce gate noise
Guaranteed quality with 100% R and UIS testing
Designed for high-density applications with a Compact PowerPAK 10 x 12 package
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