Microchip MSCSMC N-Channel MOSFET Modules, 236 A, 1.2 kV Enhancement Mode, 33-Pin Module MSCSMC120AM04TBZ2EG
- RS 제품 번호:
- 931-017
- 제조사 부품 번호:
- MSCSMC120AM04TBZ2EG
- 제조업체:
- Microchip
N
Subtotal (1 unit)*
₩227,244.00
일시적 품절
- 2027년 5월 17일 부터 배송
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- RS 제품 번호:
- 931-017
- 제조사 부품 번호:
- MSCSMC120AM04TBZ2EG
- 제조업체:
- Microchip
사양
참조 문서
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Microchip | |
| Channel Type | N | |
| Product Type | MOSFET Modules | |
| Maximum Continuous Drain Current Id | 236A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Series | MSCSMC | |
| Package Type | Module | |
| Mount Type | Direct | |
| Pin Count | 33 | |
| Maximum Drain Source Resistance Rds | 8.5mΩ | |
| Channel Mode | Enhancement Mode | |
| Maximum Gate Source Voltage Vgs | 21V | |
| Forward Voltage Vf | 4.7V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 604W | |
| Typical Gate Charge Qg @ Vgs | 726nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 62.8mm | |
| Standards/Approvals | No | |
| Height | 16.4mm | |
| Length | 56.7mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Microchip | ||
Channel Type N | ||
Product Type MOSFET Modules | ||
Maximum Continuous Drain Current Id 236A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Series MSCSMC | ||
Package Type Module | ||
Mount Type Direct | ||
Pin Count 33 | ||
Maximum Drain Source Resistance Rds 8.5mΩ | ||
Channel Mode Enhancement Mode | ||
Maximum Gate Source Voltage Vgs 21V | ||
Forward Voltage Vf 4.7V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 604W | ||
Typical Gate Charge Qg @ Vgs 726nC | ||
Maximum Operating Temperature 175°C | ||
Width 62.8mm | ||
Standards/Approvals No | ||
Height 16.4mm | ||
Length 56.7mm | ||
Automotive Standard No | ||
The Microchip Advanced silicon carbide power module delivers exceptional performance in high-efficiency applications, particularly in demanding environments requiring robust power management and thermal capabilities.
SiC technology ensures low switching and conduction losses
Integrated thermistor facilitates effective temperature monitoring
Low thermal resistance allows efficient heat dissipation
Ultra low weight and profile contribute to design flexibility
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