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Vishay Half Bridge VS-H N-Channel MOSFET Modules, 195 A, 650 V Enhancement, 12-Pin FlatPAK 5 x 6 VS-HOT200C080

RS 제품 번호:: 869-230
제조사 부품 번호:: VS-HOT200C080
제조업체:: Vishay

Vishay Half Bridge VS-H N-Channel MOSFET Modules, 195 A, 650 V Enhancement, 12-Pin FlatPAK 5 x 6 VS-HOT200C080

대량 구매 할인 기용 가능

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Subtotal (1 unit)*

₩67,134.00

일시적 품절

2027년 2월 15일 부터 배송

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RS 제품 번호:: 869-230
제조사 부품 번호:: VS-HOT200C080
제조업체:: Vishay

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	N
	Product Type	MOSFET Modules
	Maximum Continuous Drain Current Id	195A
	Maximum Drain Source Voltage Vds	650V
	Series	VS-H
	Package Type	FlatPAK 5 x 6
	Mount Type	Screw
	Pin Count	12
	Maximum Drain Source Resistance Rds	0.91mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	130nC
	Maximum Power Dissipation Pd	194W
	Maximum Gate Source Voltage Vgs	20V
	Transistor Configuration	Half Bridge
	Maximum Operating Temperature	175°C
	Length	30mm
	Width	22.8mm
	Height	12.7mm
	Standards/Approvals	UL 94 V-0
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type N
	Product Type MOSFET Modules
	Maximum Continuous Drain Current Id 195A
	Maximum Drain Source Voltage Vds 650V
	Series VS-H
	Package Type FlatPAK 5 x 6
	Mount Type Screw
	Pin Count 12
	Maximum Drain Source Resistance Rds 0.91mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 130nC
	Maximum Power Dissipation Pd 194W
	Maximum Gate Source Voltage Vgs 20V
	Transistor Configuration Half Bridge
	Maximum Operating Temperature 175°C
	Length 30mm
	Width 22.8mm
	Height 12.7mm
	Standards/Approvals UL 94 V-0
	Automotive Standard No

Datasheet - VS-HOT200C080

COO (Country of Origin):: KR

The Vishay power module designed for half-bridge applications with Advanced features for current and temperature sensing. This innovative solution provides efficient power management and reliability.

Supports current and temperature sensing for enhanced reliability

Utilises an electrically isolated DBC substrate to minimise EMI

Passes rigorous AQG324 qualification for automotive applications

Operates at a maximum junction temperature of 175 °C, ensuring durability

Delivers low on-resistance values of 0.45 mΩ for improved efficiency

Vishay Half Bridge VS-H N-Channel MOSFET Modules, 195 A, 650 V Enhancement, 12-Pin FlatPAK 5 x 6 VS-HOT200C080

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