Vishay VS-GT200TS065S, N-Channel Half Bridge IGBT, 476 A 650 V, 7-Pin INT-A-PAK, Panel
- RS 제품 번호:
- 276-6408
- 제조사 부품 번호:
- VS-GT200TS065S
- 제조업체:
- Vishay
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- RS 제품 번호:
- 276-6408
- 제조사 부품 번호:
- VS-GT200TS065S
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Maximum Continuous Collector Current Ic | 476A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 1kW | |
| Number of Transistors | 2 | |
| Package Type | INT-A-PAK | |
| Configuration | Half Bridge | |
| Mount Type | Panel | |
| Channel Type | N | |
| Pin Count | 7 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.09V | |
| Maximum Operating Temperature | 175°C | |
| Height | 3mm | |
| Standards/Approvals | UL E78996 | |
| Length | 94.4mm | |
| Width | 3mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Maximum Continuous Collector Current Ic 476A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 1kW | ||
Number of Transistors 2 | ||
Package Type INT-A-PAK | ||
Configuration Half Bridge | ||
Mount Type Panel | ||
Channel Type N | ||
Pin Count 7 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.09V | ||
Maximum Operating Temperature 175°C | ||
Height 3mm | ||
Standards/Approvals UL E78996 | ||
Length 94.4mm | ||
Width 3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IT
The Vishay IGBT features Gen 4 FRED Pt technology anti parallel diodes with ultra soft reverse recovery characteristics. It is optimized for high current inverter stages (AC TIG welding machines).
UL approved
Very low conduction losses
Low EMI
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