Vishay TrenchFET N channel-Channel Automotive MOSFET, 58 A, 100 V MOSFET, 8-Pin PowerPAK SO-8L SQJ114EP-T1_GE3
- RS 제품 번호:
- 790-423
- 제조사 부품 번호:
- SQJ114EP-T1_GE3
- 제조업체:
- Vishay
N
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 tape of 10 units)*
₩24,219.00
일시적 품절
- 2027년 4월 13일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tape* |
|---|---|---|
| 10 - 40 | ₩2,421.90 | ₩24,213.15 |
| 50 + | ₩2,373.15 | ₩23,735.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 790-423
- 제조사 부품 번호:
- SQJ114EP-T1_GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | Automotive MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK SO-8L | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0119Ω | |
| Channel Mode | MOSFET | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 115W | |
| Typical Gate Charge Qg @ Vgs | 75nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type Automotive MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK SO-8L | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0119Ω | ||
Channel Mode MOSFET | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 115W | ||
Typical Gate Charge Qg @ Vgs 75nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay Automotive N-Channel MOSFET delivers superior performance as a power switching device. It is designed for high-efficiency applications, offering excellent thermal performance and drive capabilities.
PowerPAK SO-8L package for Compact design
AEC Q101 qualified for automotive applications
Drain-source voltage rating of 100V ensures reliability
Ultra-low on-state resistance of 0.0119Ω at 10V enhances efficiency
관련된 링크들
- Vishay TrenchFET N channel-Channel Automotive MOSFET, 95 A, 100 V MOSFET, 4-Pin PowerPAK SO-8L SQJ112EP-T1_GE3
- Vishay TrenchFET N channel-Channel MOSFET, 99 A, 40 V Enhancement, 4-Pin PowerPAK SO-8L SQJ742EP-T1_GE3
- Vishay TrenchFET N channel-Channel MOSFET, 85 A, 40 V Enhancement, 4-Pin PowerPAK SO-8L SQJ746EP-T2_GE3
- Vishay TrenchFET Type N-Channel MOSFET, 114 A, 40 V Enhancement, 4-Pin SO-8 SQJ152EP-T1_GE3
- Vishay SQJ Type N-Channel MOSFET, 210 A, 80 V, 8-Pin PowerPAK SO-8L SQJ182EP-T1_GE3
- Vishay TrenchFET N channel-Channel Automotive MOSFET, 49 A, 80 V MOSFET, 4-Pin PowerPAK SO-8L SQJ183ELP-T1_GE3
- Vishay Single SQJ 1 Type P-Channel MOSFET, 36 A, 60 V, 8-Pin PowerPAK SO-8L SQJ457EP-T1_GE3
- Vishay TrenchFET Type N-Channel MOSFET, 114 A, 40 V Enhancement, 4-Pin SO-8