Infineon CoolSiC N channel-Channel Power MOSFET, 111 A, 400 V Enhancement, 16-Pin PG-HDSOP-16 IMLT40R015M2HXTMA1
- RS 제품 번호:
- 762-910
- 제조사 부품 번호:
- IMLT40R015M2HXTMA1
- 제조업체:
- Infineon
N
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View bulk pricing optionsSubtotal (1 unit)*
₩19,640.40
일시적 품절
- 2027년 6월 11일 부터 배송
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수량 | 한팩당 |
|---|---|
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- RS 제품 번호:
- 762-910
- 제조사 부품 번호:
- IMLT40R015M2HXTMA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 111A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | PG-HDSOP-16 | |
| Series | CoolSiC | |
| Mount Type | Surface | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Power Dissipation Pd | 341W | |
| Typical Gate Charge Qg @ Vgs | 62nC | |
| Forward Voltage Vf | 4.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.2mm | |
| Width | 2.35mm | |
| Standards/Approvals | RoHS | |
| Length | 10.1mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 111A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type PG-HDSOP-16 | ||
Series CoolSiC | ||
Mount Type Surface | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Power Dissipation Pd 341W | ||
Typical Gate Charge Qg @ Vgs 62nC | ||
Forward Voltage Vf 4.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 15.2mm | ||
Width 2.35mm | ||
Standards/Approvals RoHS | ||
Length 10.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC MOSFET is Ideal for high frequency switching and synchronous rectific and features Benchmark gate threshold voltage. Additionally it features XT interconnection technology for best‑in‑class thermal performance.
100% avalanche tested
Recommended gate driving voltage
Qualified for industrial applications
Used for energy storage, UPS and battery formation
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