Infineon OptiMOS Type N-Channel MOSFET, 323 A, 80 V Enhancement, 9-Pin PG-TTFN-9 IQD016N08NM5CGATMA1
- RS 제품 번호:
- 284-932
- 제조사 부품 번호:
- IQD016N08NM5CGATMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩13,509.68
재고있음
- 30 개 단위 배송 준비 완료
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 18 | ₩6,754.84 | ₩13,509.68 |
| 20 - 198 | ₩6,078.04 | ₩12,156.08 |
| 200 - 998 | ₩5,609.92 | ₩11,219.84 |
| 1000 - 1998 | ₩5,203.84 | ₩10,407.68 |
| 2000 + | ₩4,662.40 | ₩9,324.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 284-932
- 제조사 부품 번호:
- IQD016N08NM5CGATMA1
- 제조업체:
- Infineon
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참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 323A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PG-TTFN-9 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 1.57mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Maximum Power Dissipation Pd | 333W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC, RoHS, IEC61249-2-21 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 323A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PG-TTFN-9 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 1.57mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Maximum Power Dissipation Pd 333W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC, RoHS, IEC61249-2-21 | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS 5 Power Transistor is engineered to deliver exceptional performance with its Advanced N channel design. This robust component is ideally suited for applications where high efficiency and low on resistance are paramount. Operating at a breakdown voltage of 80V, it ensures reliable operation in demanding environments. With a superior thermal resistance profile, this power transistor stands up to the rigours of industrial applications, making it a go to solution for engineers looking to enhance energy efficiency in power management systems. Moreover, the extensive validation process guarantees adherence to the highest standards of reliability and safety, ensuring your designs are both performant and resilient.
N channel for efficient power conduction
Low on resistance minimizes power loss
Superior thermal management for longevity
100% avalanche tested for stability
Pb free and RoHS compliant
Halogen free construction for safety
JEDEC qualified for industrial applications
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