Infineon AIMBG75R N-Channel MOSFET, 64 A, 750 V, 7-Pin PG-TO263-7 AIMBG75R040M2HXTMA1
- RS 제품 번호:
- 762-869
- 제조사 부품 번호:
- AIMBG75R040M2HXTMA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 unit)*
₩39,380.00
일시적 품절
- 2027년 11월 11일 부터 배송
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수량 | 한팩당 |
|---|---|
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* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 762-869
- 제조사 부품 번호:
- AIMBG75R040M2HXTMA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Series | AIMBG75R | |
| Package Type | PG-TO263-7 | |
| Mount Type | SMD | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 31mΩ | |
| Typical Gate Charge Qg @ Vgs | 169nC | |
| Maximum Power Dissipation Pd | 234W | |
| Maximum Gate Source Voltage Vgs | 23V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 9.8mm | |
| Width | 15mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 750V | ||
Series AIMBG75R | ||
Package Type PG-TO263-7 | ||
Mount Type SMD | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 31mΩ | ||
Typical Gate Charge Qg @ Vgs 169nC | ||
Maximum Power Dissipation Pd 234W | ||
Maximum Gate Source Voltage Vgs 23V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 9.8mm | ||
Width 15mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
The Infineon MOSFET is a high-performance power device designed for automotive applications, delivering efficient switching capabilities and robust reliability across demanding environments.
Robust 750V technology ensures high reliability and performance
Designed with enhanced thermal dissipation to improve system efficiency
Features exceptional switching characteristics for increased operational frequency
Vastly reduced switching losses through innovative gate control mechanisms
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