Infineon CoolSiC Type N-Channel MOSFET, 47 A, 750 V Enhancement, 7-Pin PG-TO263-7 AIMBG75R040M1HXTMA1

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₩19,899.80

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1 - 9₩19,899.80
10 - 99₩17,901.36
100 - 499₩16,506.40
500 - 999₩15,320.12
1000 +₩13,739.04

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
349-209
제조사 부품 번호:
AIMBG75R040M1HXTMA1
제조업체:
Infineon
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

47A

Maximum Drain Source Voltage Vds

750V

Series

CoolSiC

Package Type

PG-TO263-7

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

52mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

34nC

Maximum Gate Source Voltage Vgs

23 V

Maximum Power Dissipation Pd

211W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

COO (Country of Origin):
MY
The Infineon 750 V CoolSiC MOSFET is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgapSiC material characteristics, the 750V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.

Infineon proprietary die attach technology

Driver source pin available

Enhanced robustness and reliability for bus voltages beyond 500 V

Superior efficiency in hard switching

Higher switching frequency in soft switching topologies

Robustness against parasitic turn on for unipolar gate driving

Best in class thermal dissipation

Reduced switching losses through improved gate control

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